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2SK2415

NEC
Part Number 2SK2415
Manufacturer NEC
Description SWITCHING N-CHANNEL POWER MOSFET
Published Mar 30, 2005
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415, 2SK2415-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTIO...
Datasheet PDF File 2SK2415 PDF File

2SK2415
2SK2415

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415, 2SK2415-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2415 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.
PACKAGE DIMENSIONS (in millimeters) + 0.
2 1.
5 – 0.
1 6.
5 ± 0.
2 2.
3 ± 0.
2 0.
5 ± 0.
1 FEATURES 1.
6 ± 0.
2 5.
0 ± 0.
2 4 RDS(on)1 = 0.
10 Ω MAX.
(@ VGS = 10 V, ID = 4.
0 A) RDS(on)2 = 0.
15 Ω MAX.
(@ VGS = 4 V, ID = 4.
0 A) 1 2 3 • Low Ciss Ciss = 570 pF TYP.
1.
3 MAX.
QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
2.
3 2.
3 7.
0 MAX.
5.
5 ± 0.
2 13.
7 MIN.
• Low On-Resistance 0.
6 ± 0.
1 0.
6 ± 0.
1 1.
2.
3.
4.
Gate Drain Source Fin (Drain) TO-251 (MP-3) 6.
5 ± 0.
2 5.
0 ± 0.
2 + 0.
2 1.
5 – 0.
1 0.
75 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (Ta = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 60 ±20 ± 8.
0 ±32 20 1.
0 150 8.
0 6.
4 V 0.
8 4.
3 MAX.
2.
3 ± 0.
2 0.
5 ± 0.
1 A A W W °C A mJ 12.
0 MIN.
1.
3 MAX.
0.
9 MAX.
0.
8 MAX.
2.
3 2.
3 0.
8 –55 to +150 °C 1.
2.
3.
4.
Gate Drain Source Fin (Drain) TO-252 (MP-3Z) Drain ** Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 Gate Body Diode Gate Protection Diode Source The information in this document is subject to change without notice.
Document No.
D13207EJ1V1DS00 (1st edition) (Previous No.
TC-2496) Date Published December 1997 N CP(K) Printed in Japan © 0.
5 1 2 3 5.
5 ± 0.
2 V 10.
0 MAX.
1.
0 MIN.
1.
5 TYP.
4 1994 2SK2415, 2SK2415-Z ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source On-State Resistance Drain to Source On...


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