DatasheetsPDF.com

2SK2647-01


Part Number 2SK2647-01
Manufacturer Fuji Electric
Title N-channel MOS-FET
Description 2SK2647-01MR FAP-IIS Series Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Gu...
Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 800V 4Ω 4A 40W Outline Drawing Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier Maximum R...

File Size 367.01KB
Datasheet 2SK2647-01 PDF File








Similar Ai Datasheet

2SK2647-01MR : 2SK2647-01MR FAP-IIS Series Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 800V 4Ω 4A 40W Outline Drawing Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier Maximum Ratings and Characteristics - Absolute Maximum Ratings T( C=25°C), unless otherwise specified Equivalent Circuit Rating 800 4 16 ±30 4 109 40 150 -55 ~ +150 Unit V A A V A mJ W °C °C Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch ≤ 150°C) Avalanche Energy Max. Power Dissipation O.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)