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2SK2735S

Part Number	2SK2735S
Manufacturer	Hitachi Semiconductor
Description	Silicon N-Channel MOS FET
Published	Mar 30, 2005
Detailed Description	2SK2735(L), 2SK2735(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-543 1st. Edition Features • Low on-...
Datasheet	2SK2735S PDF File

Overview

2SK2735(L), 2SK2735(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-543 1st.
Edition Features • Low on-resistance R DS = 20 mΩ typ.
• High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK–2 4 4 D 1 2 G 3 S 1 2 3 1.
Gate 2.
Drain 3.
Source 4.
Drain 2SK2735(L), 2SK2735(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 30 ±20 20 80 20 20 150...

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