DatasheetsPDF.com

2SK2872-01MR

Fuji Electric
Part Number 2SK2872-01MR
Manufacturer Fuji Electric
Description N-channel MOS-FET
Published Mar 30, 2005
Detailed Description 2SK2872-01MR FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power H...
Datasheet PDF File 2SK2872-01MR PDF File

2SK2872-01MR
2SK2872-01MR


Overview
2SK2872-01MR FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 450V 1,2Ω ±8A 30W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch ≤ 150°C) Avalanche Energy Max.
Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS I AR E AS PD T ch T stg Rating 450 ±8 ±32 ±35 8 164.
1 30 150 -55 ~ +150 L=4.
70mH,Vcc=45V > Equivalent Circuit Unit V A A V A mJ W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance Symbol BV DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=450V Tch=25°C VGS=0V Tch=125°C VGS=±35V VDS=0V ID=4A VGS=10V ID=4A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=8A VGS=10V RGS=10 Ω Tch=25°C L = 4,70mH IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C Min.
450 3,5 Typ.
4,0 10 0,2 10 1,0 4 540 100 45 13 40 45 25 1,1 450 3,7 Max.
4,5 500 1,0 100 1,2 810 150 70 20 60 70 40 1,65 2 8 Unit V V µA mA nA Ω S pF pF pF ns ns ns ns A V ns µC Symbol R th(ch-c) R th(ch-a) Test conditions channel to case channel to air Min.
Typ.
Max.
4,...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)