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2SK2876-01MR

Part Number	2SK2876-01MR
Manufacturer	Fuji Electric
Description	N-channel MOS-FET
Published	Mar 30, 2005
Detailed Description	2SK2876-01MR FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power H...
Datasheet	2SK2876-01MR PDF File

Overview

2SK2876-01MR FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 500V 1,5Ω ±6A 30W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch ≤ 150°C) Avalanche Energy Max.
Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS I AR E AS PD T ch T stg Rating 500 ±6 ±24 ±35 6 196.
9 30 150 -55 ~ +150 L=10.
0mH,Vcc=50V > Equivalent Circuit Unit V A A V A mJ W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Curre...

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2SK2876-01MR N-channel MOS-FET - Fuji Electric

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