DatasheetsPDF.com

2SK2895-01

Fuji Electric
Part Number 2SK2895-01
Manufacturer Fuji Electric
Description N-channel MOS-FET
Published Mar 30, 2005
Detailed Description 2SK2895-01 FAP-IIIB Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche ...
Datasheet PDF File 2SK2895-01 PDF File

2SK2895-01
2SK2895-01


Overview
2SK2895-01 FAP-IIIB Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 60V 0,012Ω ±45A 60W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max.
Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Characteristics 60 ±45 ±180 ±20 461.
9 60 150 -55 ~ +150 L=0.
304mH,Vcc24V Unit V A A V mJ* W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BV DSS V GS(th) I DSS I DSS I DSS R DS(on) g C C C t t t t I V t Q fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=60V Tch=25°C VGS=0V Tch=125°C VGS=±20V VDS=0V VGS=4V ID=22,5A VGS=10V ID=22,5A ID=22,5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V VGS=10V ID=45A RGS=10 Ω Tch=25°C L = 100µH IF=45A VGS=0V Tch=25°C IF=45A VGS=0V -dI/dt=100A/µs Tch=25°C Min.
60 1 Typ.
1,5 10 0,2 10 15 10 35 2900 930 260 13 35 190 75 0,95 55 0.
10 Max.
2,0 500 1,0 100 20 12 4350 1400 390 30 50 290 140 1,43 Unit V V µA mA nA mΩ S pF pF pF ns ns ns ns A V ns µC 15 45 - Thermal Characteristics Item Thermal Resistance R R th(ch-c) th(ch-a) Symbol channel to case channel to air Min.
Typ.
Max.
2,08 75,0 Unit °C/W °C/W N-channel MOS-FET 60V 0,012Ω 2SK2895-01 FAP-IIIB Series Drain-S...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)