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2SK2908-01S

Fuji Electric
Part Number 2SK2908-01S
Manufacturer Fuji Electric
Description N-channel MOS-FET
Published Mar 30, 2005
Detailed Description 2SK2908-01L,S FAP-IIIB Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanc...
Datasheet PDF File 2SK2908-01S PDF File

2SK2908-01S
2SK2908-01S

Overview
2SK2908-01L,S FAP-IIIB Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 600V 1,2Ω ±9A 60W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or non-repetitive Maximum Avalanche Energy Max.
Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS I AR E AV PD T ch T stg Rating 600 ±9 ±32 ±35 9 144.
4 60 150 -55 ~ +150 L=3.
27mH,Vcc=60V Unit V A A V V mJ* W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BV DSS V GS(th) I DSS I DSS I GSS R DS(on) g C C C t t t t I V t Q fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=600V Tch=25°C VGS=0V Tch=125°C VGS=±35V VDS=0V ID=4,5A VGS=10V VGS=10V ID=4,5A ID=4,5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V VGS=10V ID=9A RGS=10 Ω Tch=25°C L = 3,27mH IF=2 X IDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C Min.
600 3,5 Typ.
4,0 10 0,2 10 1,0 1,0 5 900 150 70 25 70 60 35 1,0 550 7,0 Max.
4,5 500 1,0 100 1,2 1,2 1400 230 110 40 110 90 60 1,50 2,5 9 Unit V V µA mA nA Ω Ω S pF pF pF ns ns ns ns A V ns µC - Thermal Characteristics Item Thermal Resistance R R th(ch-c) th(ch-a) Symbol channel to case channel to ambient Min.
Typ.
Max.
2,08 75,0 Unit °C/W °C/W N-channel MOS-FET 600V 2...


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