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2SK2964

Toshiba Semiconductor
Part Number 2SK2964
Manufacturer Toshiba Semiconductor
Description Silicon N Channel MOS Type Field Effect Transistor
Published Mar 30, 2005
Detailed Description 2SK2964 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSVI) 2SK2964 Chopper Regulators, DC−DC Conve...
Datasheet PDF File 2SK2964 PDF File

2SK2964
2SK2964

Overview
2SK2964 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSVI) 2SK2964 Chopper Regulators, DC−DC Converters and Motor DriveApplications z 4-V gate drive z Low drain-source ON-resistance: RDS (ON) = 0.
13 Ω (typ.
) z High forward transfer admittance: |Yfs| = 2.
5 S (typ.
) z Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) z Enhancement mode: Vth = 0.
8 to 2.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation Drain power dissipation (Note 2) Single pulse avalanche ener...


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