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2SK2974

Mitsubishi Electric Semiconductor
Part Number 2SK2974
Manufacturer Mitsubishi Electric Semiconductor
Description RF POWER MOS FET
Published Mar 30, 2005
Detailed Description MITSUBISHI RF POWER MOS FET 2SK2974 DESCRIPTION 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF...
Datasheet PDF File 2SK2974 PDF File

2SK2974
2SK2974

Overview
MITSUBISHI RF POWER MOS FET 2SK2974 DESCRIPTION 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications.
OUTLINE DRAWING INDEX MARK (TOP) Dimensions in mm (BOTTOM) FEATURES • High power gain:Gpe≥8.
4dB @VDD=7.
2V,f=450MHz,Pin=30dBm • High efficiency:55% typ.
• Source case type seramic package (connected internally to source) 3 4.
9 1 2 2.
0 3.
50 t=1.
2MAX APPLICATION For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets.
1 : DRAIN 2 : SOURCE 3 : GATE MARKING INDEX MARK TYPE No.
LOT No.
ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise noted) Symbol VDSS VGSS Pch Tj Tstg Parameter Drain to source voltage Gate to source voltage Channel dissipation Junction temperature Storage temperature Conditions Ratings 17 ±10 10 175 -40 to +110 Unit V V W ˚C ˚C Tc=25˚C (Note2) Note1: Above parameters are guaranteed independently.
2: Solder source pad on Copper Block(14×2.
8×2mm) ELECTRICAL CHARACTERISTICS (...


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