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2SK2984

NEC
Part Number 2SK2984
Manufacturer NEC
Description SWITCHING N-CHANNEL POWER MOS FET
Published Mar 30, 2005
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2984 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This prod...
Datasheet PDF File 2SK2984 PDF File

2SK2984
2SK2984

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2984 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application.
FEATURES • Low on-resistance RDS(on)1 = 10 mΩ (MAX.
) (VGS = 10 V, ID = 20 A) RDS(on)2 = 15 mΩ (MAX.
) (VGS = 4.
5 V, ID = 20 A) • Low Ciss Ciss = 2850 pF TYP.
• Built-in gate protection diode ORDERING INFORMATION PART NUMBER 2SK2984 2SK2984-S 2SK2984-ZJ PACKAGE TO-220AB TO-262 TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note3 Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 30 ±20 ±40 ±160 1.
5 60 150 −55 to +150 V V A A W W °C °C Note2 Total Power Dissipation (TA = 25°C) Total Power Dissipation (Tc = 25°C) Channel Temperature Storage Temperature Notes.
1 VGS = 0 V 2 VDS = 0 V 3 PW ≤ 10 µ s, Duty Cycle ≤ 1 % .
The information in this document is subject to change without notice.
Document No.
D12356EJ1V0DS00 (1st edition) Date Published October 1998 NS CP (K) Printed in Japan © 1998 2SK2984 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr ID = 40 A VDD = 24 V VGS = 10 V IF = 40 A, VGS = 0 V IF = 40 A, VGS = 0 V di/dt = 100 A /µS TEST CONDITIONS VGS = 10 V, ID = 20 A VGS = 4.
5 V, ID = 20 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 20 A VDS = 30 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 20 A VGS(on) = 10 V VDD = 15 V R...


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