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2SK2986

Toshiba Semiconductor
Part Number 2SK2986
Manufacturer Toshiba Semiconductor
Description Silicon N Channel MOS Type Field Effect Transistor
Published Mar 30, 2005
Detailed Description 2SK2986 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) 2SK2986 DC−DC Converter, Relay Drive and M...
Datasheet PDF File 2SK2986 PDF File

2SK2986
2SK2986

Overview
2SK2986 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) 2SK2986 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 4.
5 mΩ (typ.
) z High forward transfer admittance : |Yfs| = 80 S (typ.
) z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) z Enhancement mode : Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage DC (Note 1) Drain current Pulse (t≤10 s) (Note 1) Pulse (t≤1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (No...


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