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2SK2996

Part Number	2SK2996
Manufacturer	Toshiba Semiconductor
Description	N-Channel MOSFET
Published	Mar 30, 2005
Detailed Description	www.DataSheet4U.com 2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2996 DC−DC Converte...
Datasheet	2SK2996 PDF File

Overview

www.
DataSheet4U.
com 2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2996 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.
74 Ω (typ.
) : |Yfs| = 6.
8 S (typ.
) Unit: mm : IDSS = 100 μA (max) (VDS = 600 V) : Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 10 30 45 252 10 4.
5 150 −55~150 Unit V V V A W mJ A mJ °C °C P...

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