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2SK3026

Panasonic Semiconductor
Part Number 2SK3026
Manufacturer Panasonic Semiconductor
Description Silicon N-Channel Power F-MOS FET
Published Mar 30, 2005
Detailed Description Power F-MOS FETs 2SK3026 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guarantee...
Datasheet PDF File 2SK3026 PDF File

2SK3026
2SK3026


Overview
Power F-MOS FETs 2SK3026 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage unit: mm 4.
6±0.
2 φ3.
2±0.
1 9.
9±0.
3 2.
9±0.
2 4.
1±0.
2 8.
0±0.
2 Solder Dip 13.
7–0.
2 q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.
0±0.
3 3.
0±0.
2 s Applications +0.
5 1.
2±0.
15 1.
45±0.
15 0.
75±0.
1 2.
54±0.
2 5.
08±0.
4 1 2 3 2.
6±0.
1 0.
7±0.
1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Sy...



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