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2SK3075

Part Number	2SK3075
Manufacturer	Toshiba Semiconductor
Description	N-Channel MOSFET
Published	Mar 30, 2005
Detailed Description	2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF Power MOSFET for VHF− and UHF−Band Power ...
Datasheet	2SK3075 PDF File

Overview

2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF Power MOSFET for VHF− and UHF−Band Power Amplifier (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.
These TOSHIBA products are neither intended nor warranted for any other use.
Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment.
Unit: mm z Output Power z Power Gain z Drain Efficiency : PO ≥ 7.
5W : GP ≥ 11.
7dB : ηD ≥ 50% Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage V...

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