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2SK3090

Toshiba Semiconductor
Part Number 2SK3090
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3090 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) 2SK3090 Chopper Regulator DC−DC Converter ...
Datasheet PDF File 2SK3090 PDF File

2SK3090
2SK3090

Overview
...and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 16 mΩ (typ.
) z High forward transfer admittance : |Yfs| = 26 S (typ.
) z Low leakage current : IDSS = 100 μA (max) (VDS = 30 V) z Enhancement mode : Vth = 1.
5 to 3.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 30 30 ±2...


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