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2SK330

Toshiba Semiconductor
Part Number 2SK330
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK330 For Audio Amplifier, Analog Switch, Constant Curr...
Datasheet PDF File 2SK330 PDF File

2SK330
2SK330


Overview
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK330 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SK330 Unit: mm • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA (max) (VGS = −30 V) • Low RDS (ON): RDS (ON) = 320 Ω (typ.
) (IDSS = 5 mA) • Complementary to 2SJ105 • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage VGDS −50 V Gate current IG 10 mA Drain power dissipation PD 200 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.
g.
the application of JEDEC ― high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the JEITA ― reliability significantly even if the operating conditions (i.
e.
TOSHIBA 2-4E1B operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Weight: 0.
13 g (typ.
) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance IGSS VGS = −30 V, VDS = 0 V (BR) GDS VDS = 0, IG = −100 μA IDSS (Note) VDS = 10 V, VGS = 0 VGS (OFF) VDS = 10 V, ID = 0.
1 μA ⎪Yfs⎪ VDS = 10 V, VGS = 0, f = 1 kHz RDS (ON) VDS = 10 mV, VGS = 0, IDSS = 5 mA Ciss VDS = 10 V, VGS = 0, f = 1 MHz Crss VGD = −10 V, ID = 0, f = 1 MHz Note: IDSS classification Y: 1.
2~3.
0 mA, GR: 2.
6~6.
5 mA, BL: 6~14 mA Min Typ.
Max Unit ⎯ ⎯ −1.
0 nA −50 ⎯ ⎯ V 1.
2 ⎯ 14 mA −0.
7 ⎯ −6.
0 V 1.
5 4...


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