DatasheetsPDF.com

2SK3505-01MR

Sanyo Semicon Device
Part Number 2SK3505-01MR
Manufacturer Sanyo Semicon Device
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3505-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power ...
Datasheet PDF File 2SK3505-01MR PDF File

2SK3505-01MR
2SK3505-01MR

Overview
2SK3505-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Drain-source voltage VDS 500 V Continuous drain current ID ±14 A Pulsed drain current ID(puls] ±56 A Gate-source voltage VGS ±30 V Repetitive or non-repetitive IAR *2 14 A Maximum Avalanche Energy EAS *1 242 mJ Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/µs Peak Diode Recovery dV/dt dV/dt *3 5 kV/µs Max.
power dissipation PD Ta=25°C Tc=25°C 2.
1 60 W Operating and storage Tch +150 °C temperature range Tstg -55 to +150 °C *1 L=2.
27mH, Vcc=50V *2 Tch<=150°C *3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS<= 500V Electrical characteristics (Tc =25°C unless otherwise specified) Equivalent circuit schematic Drain(D) Gate(G) Source(S) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=500V VGS=0V VDS=400V VGS=0V VGS=±30V VDS=0V Tch=25°C Tch=125°C ID=7A VGS=10V ID=7A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=7A VGS=10V RGS=10 Ω VCC=250V ID=14A VGS=10V L=2.
27mH Tch=25°C IF=14A VGS=0V Tch=25°C IF=14A VGS=0V -di/dt=100A/µs Tch=25°C Min.
Typ.
Max.
Units 500 V 3.
0 5.
...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)