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2SK360

Hitachi Semiconductor
Part Number 2SK360
Manufacturer Hitachi Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK360 Silicon N-Channel MOS FET Application VHF amplifier Outline MPAK 3 1 2 1. Gate 2. Drain 3. Source 2SK360 Abs...
Datasheet PDF File 2SK360 PDF File

2SK360
2SK360

Overview
2SK360 Silicon N-Channel MOS FET Application VHF amplifier Outline MPAK 3 1 2 1.
Gate 2.
Drain 3.
Source 2SK360 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Note: 1.
VGS = –4 V Symbol VDSX* VGSS ID IG Pch Tch Tstg 1 Ratings 20 ±5 30 ±1 150 150 –55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate cutoff current Drain current Gate to source cutoff voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Note: Grade Mark I DSS D IGD 4 to 8 E IGE 6 to 10 Symbol V(BR)DSX I GSS I DSS* 1 Min 20 — 4 0 8 — — — — — F IGF 8 to 12 Typ — — — — 14 2.
5 1.
6 0.
03 30 2.
0 Max — ±20 12 –2.
0 — — — — — — Unit V nA mA V mS pF pF pF dB dB Test conditions I D = 100 µA, VGS = –4 V VGS = ±5 V, VDS = 0 VDS = 10 V, VGS = 0 VDS = 10 V,...


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