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2SK363

Toshiba Semiconductor
Part Number 2SK363
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Curr...
Datasheet PDF File 2SK363 PDF File

2SK363
2SK363

Overview
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SK363 Unit: mm • High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1.
0 nA (max) (VGS = −30 V) • Low RDS (ON): RDS (ON) = 20 Ω (typ.
) (IDSS = 15 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range VGDS IG PD Tj Tstg −40 V 10 mA 400 mW 125 °C −55~125 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semicon...


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