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2SK368

Toshiba Semiconductor
Part Number 2SK368
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applic...
Datasheet PDF File 2SK368 PDF File

2SK368
2SK368

Overview
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Constant Current Applications 2SK368 Unit: mm · High breakdown voltage: VGDS = −100 V (min) · High input impedance: IGSS = −1.
0 nA (max) (VGS = −80 V) · Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating -100 10 150 125 -55~125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1B Weight: 0.
012 g (typ.
) Characteristics Symbol Test Condition Gate cut-off current ...


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