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2SK369

Toshiba Semiconductor
Part Number 2SK369
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 2SK369 For Low Noise Audio Amplifier Applicatio...
Datasheet PDF File 2SK369 PDF File

2SK369
2SK369

Overview
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 2SK369 For Low Noise Audio Amplifier Applications Unit: mm · Suitable for use as first stage for equalizer and MC head amplifiers.
· High |Yfs|: |Yfs| = 40 mS (typ.
) (VDS = 10 V, VGS = 0, IDSS = 5 mA) · High breakdown voltage: VGDS = −40 V (min) · Super low noise: NF = 1.
0dB (typ.
) (VDS = 10 V, ID = 5 mA, f = 1 kHz, RG = 100 Ω) · High input impedance: IGSS = −1 nA (max) (VGS = −30 V) Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating -40 10 400 125 -55~125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1D Weight: 0.
21 g (typ.
) Characteristics Symbol Test Condition Min Typ.
Max Unit Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reve...


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