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2SK663

Part Number	2SK663
Manufacturer	Panasonic Semiconductor
Description	N-Channel MOSFET
Published	Mar 30, 2005
Detailed Description	Silicon Junction FETs (Small Signal) 2SK663 Silicon N-Channel Junction FET For low-frequency amplification For switchin...
Datasheet	2SK663 PDF File

Overview

Silicon Junction FETs (Small Signal) 2SK663 Silicon N-Channel Junction FET For low-frequency amplification For switching 2.
1±0.
1 0.
425 1.
25±0.
1 0.
425 unit: mm q Low noise-figure (NF) q High gate to drain voltage VGDO q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
0.
65 1 2.
0±0.
2 1.
3±0.
1 0.
65 3 2 0.
2 0.
9±0.
1 0 to 0.
1 Parameter Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO VGSO ID IG PD Tj Tstg Ratings 55 −55 −55 30 10 150 125 −55 to +125 Unit V V V mA mA mW °C °C 0.
7±0.
1 s Ab...

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