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30JL2C41

Toshiba Semiconductor
Part Number 30JL2C41
Manufacturer Toshiba Semiconductor
Description HIGH EFFICIENCY DIODE STACK
Published Mar 30, 2005
Detailed Description 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE 30JL2C41 SWITCHING MODE POWER SUPPLY APPLICAT...
Datasheet PDF File 30JL2C41 PDF File

30JL2C41
30JL2C41

Overview
30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE 30JL2C41 SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION Unit: mm z Repetitive Peak Reverse Voltage : VRRM = 600 V z Average Output Rectified Current : IO = 30 A z Ultra Fast Reverse-Recovery Time : trr = 50 ns (Max) z Low Switching Losses and Output Noise ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Reverse Voltage VRRM 600 V Average Output Rectified Current IO 30 A Peak One Cycle Surge Forward Current (Sine Wave) IFSM 150 (50Hz) A 165 (60Hz) Junction Temperature Storage Temperature Range Screw Torque Tj −40~150 °C JEDEC ― Tstg ...


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