DatasheetsPDF.com

3SK165A

Sony Corporation
Part Number 3SK165A
Manufacturer Sony Corporation
Description GaAs N-channel Dual Gate MES FET
Published Mar 30, 2005
Detailed Description 3SK165A GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Descript...
Datasheet PDF File 3SK165A PDF File

3SK165A
3SK165A

Overview
3SK165A GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office.
Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification.
This FET is suitable for a wide range of applications including cellular, cordless phone.
Features • Low voltage operation • Low noise: NF = 1.
2dB (typ.
) at 800MHz • High gain: Ga = 20dB (typ) at 800MHz • High stability Application UHF band amplifier, mixer and oscillator Structure GaAs N-channel dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25°C) • Drain to source voltage VDSX 8 • Gate 1 to source voltage VG1S –6 • Gate 2 to source voltage VG2...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)