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LWE2010S

NXP
Part Number LWE2010S
Manufacturer NXP
Description NPN microwave power transistor
Published Mar 30, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET LWE2010S NPN microwave power transistor Product specification Supersedes data of Nov...
Datasheet PDF File LWE2010S PDF File

LWE2010S
LWE2010S

Overview
DISCRETE SEMICONDUCTORS DATA SHEET LWE2010S NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good stability of the characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance.
APPLICATIONS Common emitter class A power amplifiers at frequencies up to 2.
3 GH...


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