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LX703

Polyfet RF Devices
Part Number LX703
Manufacturer Polyfet RF Devices
Description SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Published Mar 30, 2005
Detailed Description polyfet rf devices LX703 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF ...
Datasheet PDF File LX703 PDF File

LX703
LX703

Overview
polyfet rf devices LX703 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 100.
0 Watts Single Ended Package Style LX2 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 220 Watts Junction to Case Thermal Resistance o 0.
75 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V 13.
0 A RF CHARACTERISTICS ( 100.
0 WATTS OUTPUT ) SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 12 55 20:1 TYP MAX UNITS dB % TEST CONDITIONS Idq = 0.
80 A, Vds = 28.
0 V, F = Idq = 0.
80 A, Vds = 28.
0 V, F = 500 MHz 500 MHz η VSWR Relative Idq = 0.
80 A, Vds = 28.
0 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 4.
8 0.
25 30.
00 180.
0 4.
8 90.
0 MIN 65 6.
0 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.
60 mA, Vgs = 0V Vds = 28.
0 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.
60 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 16.
00 A Vgs = 20V, Vds = 10V Vds = 28.
0 Vgs = 0V, F = 1 MHz Vds = 28.
0 Vgs = 0V, F = 1 MHz Vds = 28.
0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 03/08/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484...


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