DatasheetsPDF.com

LY402

Part Number	LY402
Manufacturer	Polyfet RF Devices
Description	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Published	Mar 30, 2005
Detailed Description	polyfet rf devices LY402 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF ...
Datasheet	LY402 PDF File

Overview

polyfet rf devices LY402 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 220.
0 Watts Push - Pull Package Style AY HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 440 Watts Junction to Case Thermal Resistance o 0.
38 C/W Maximum Junction Temperature o ...

Similar Datasheet

LY4 Bi-power Relay - Omron
LY4-0 Bi-power Relay - Omron
LY4-D Bi-power Relay - Omron
LY402 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR - Polyfet RF Devices
LY4F General Purpose Relay - Omron Electronics
LY4F Bi-power Relay - Omron
LY4N General Purpose Relay - Omron Electronics
LY4N Bi-power Relay - Omron
LY4N-D2 Bi-power Relay - Omron
LY4S General Purpose Relay - Omron Electronics

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)