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LZ1418E100R

NXP
Part Number LZ1418E100R
Manufacturer NXP
Description NPN microwave power transistor
Published Mar 30, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET LZ1418E100R NPN microwave power transistor Product specification Supersedes data of ...
Datasheet PDF File LZ1418E100R PDF File

LZ1418E100R
LZ1418E100R

Overview
DISCRETE SEMICONDUCTORS DATA SHEET LZ1418E100R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.
APPLICATIONS • Common emitter class A amplifiers in CW conditions for military and professional applications between 1.
4 to 1.
8 GHz.
Top view 3 handbook, halfpage LZ1418E100R PINNING - SOT443A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION 1 c b e 2 MAM314 DESCRIPTION NPN silicon planar epitaxial microwav...


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