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M1MA141WAT1

Motorola  Inc
Part Number M1MA141WAT1
Manufacturer Motorola Inc
Description SC-70/SOT-323 PACKAGE COMMON ANODE DUAL SWITCHING DIODE 40/80 V-100 mA SURFACE MOUNT
Published Mar 30, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by M1MA141WAT1/D Common Anode Silicon Dual Switching Diode ...
Datasheet PDF File M1MA141WAT1 PDF File

M1MA141WAT1
M1MA141WAT1


Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by M1MA141WAT1/D Common Anode Silicon Dual Switching Diode This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications.
This device is housed in the SC–70 package which is designed for low power surface mount applications.
• Fast trr, < 10 ns • Low CD, < 15 pF • Available in 8 mm Tape and Reel Use M1MA141/2WAT1 to order the 7 inch/3000 unit reel.
Use M1MA141/2WAT3 to order the 13 inch/10,000 unit reel.
ANODE 3 M1MA141WAT1 M1MA142WAT1 Motorola Preferred Devices SC–70/SOT–323 PACKAGE COMMON ANODE DUAL SWITCHING DIODE 40/80 V–100 mA SURFACE MOUNT 3 1 2 CATHODE 1 2 MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage M1MA141WAT1 M1MA142WAT1 Peak Reverse Voltage M1MA141WAT1 M1MA142WAT1 Forward Current Single Dual Peak Forward Current Single Dual Peak Forward Surge Current Single Dual IFSM(1) IFM IF VRM Symbol VR Value 40 80 40 80 100 150 225 340 500 750 Unit Vdc CASE 419–02, STYLE 4 SC–70/SOT–323 Vdc mAdc mAdc mAdc THERMAL CHARACTERISTICS Rating Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 150 150 – 55 ~ + 150 Unit mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Reverse Voltage Leakage Current M1MA141WAT1 M1MA142WAT1 Forward Voltage Reverse Breakdown Voltage M1MA141WAT1 M1MA142WAT1 Diode Capacitance Reverse Recovery Time 1.
t = 1 SEC 2.
trr Test Circuit Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value.
Symbol IR VF VR CD trr(2) Condition VR = 35 V VR = 75 V IF = 100 mA IR = 100 µA VR = 0, f = 1.
0 MHz IF = 10 mA, VR = 6.
0 V, RL = 100 Ω, Irr = 0.
1 IR Min — — — 40 80 — — Max 0.
1 0.
1 1.
2 — — 15 10 Unit µAdc Vdc Vdc pF ns REV 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc.
1996 1 M1MA141WAT1 M1MA142WAT1 RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE tr tp IF ...



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