DatasheetsPDF.com

FJC1386

Fairchild Semiconductor
Part Number FJC1386
Manufacturer Fairchild Semiconductor
Description PNP Epitaxial Silicon Transistor
Published Mar 30, 2005
Detailed Description FJC1386 FJC1386 Low Saturation Transistor Medium Power Amplifier • Complement to FJC2098 • High Collector Current • Low...
Datasheet PDF File FJC1386 PDF File

FJC1386
FJC1386

Overview
FJC1386 FJC1386 Low Saturation Transistor Medium Power Amplifier • Complement to FJC2098 • High Collector Current • Low Collector-Emitter Saturation Voltage 1 SOT-89 1.
Base 2.
Collector 3.
Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Power Dissipation(TC=25°C) Junction Temperature Storage Temperature Value -30 -20 -6 -5 0.
5 150 - 55 ~ 150 Units V V V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Test Condition IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-20V, VB=0 VEB=-5V, IC=0 VCE=-2V, IC=-0.
5A IC=-4, IB=-0.
1A IC=-4, IB=-0.
1A 80 Min.
-30 -20 -6 -0.
5 -0.
5 390 -1.
0 -1.
5 V V Typ.
Max.
Units V V V µA µA Thermal Characteristics TC=25°C unless otherwise noted Symbol RθjA Parameter Thermal Resistance, Junction to Ambient Max 250 Units °C/W hFE Classification Classification hFE P 80 ~ 180 Marking Q 120 ~ 270 R 180 ~ 390 FAP hFE grade ©2002 Fairchild Semiconductor Corporation Rev.
A1, August 2002 FJC1386 Typical Characteristics -1400 1000 IB = -7mA VCE = - 2V Ta = 125 C o IC [mA], COLLECTOR CURRENT -1200 hFE, DC CURRENT GAIN IB = -6mA -1000 Ta = 25 C o IB = -5mA -800 IB = -4mA -600 100 Ta = - 40 C o IB = -3mA -400 IB = -2mA -200 IB = -1mA 0 -2 -4 -6 -8 -10 -12 -14 -16 10 -10m -100m -1 -10 0 V CE[V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 1.
Static Characteristic Figure 2.
DC current Gain -10 -10 VCE(sat) [V], SATURATION VOLTAGE -1 Ta = 125 C -100m o VBE(sat) [V], SATURATION VOLTAGE IC = 10 IB IC = 1...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)