DatasheetsPDF.com

FJP5304D

Fairchild Semiconductor
Part Number FJP5304D
Manufacturer Fairchild Semiconductor
Description NPN Silicon Transistor
Published Mar 30, 2005
Detailed Description FJP5304D — NPN Silicon Transistor FJP5304D NPN Silicon Transistor High Voltage High Speed Power Switch Application • Wi...
Datasheet PDF File FJP5304D PDF File

FJP5304D
FJP5304D

Overview
FJP5304D — NPN Silicon Transistor FJP5304D NPN Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diodeSuitable for Electronic Ballast Application • Suitable for Electronic Ballast Application • Small Variance in Storage Time July 2008 Equivalent Circuit C B 1 TO-220 E 1.
Base 2.
Collector 3.
Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) ICP * Collector Current (Pulse) IB Base Current (DC) IBP * Base Current (Pulse) PC Collector Dissipation (TC=25°C) TSTG Storage Temperature * Pulse Test Pulse Width = 5ms, Duty Cycle ≥ 1.
0% Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition BVCBO BVCEO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage IC = 1mA, IE = 0 IC = 5mA, IB = 0 BVEBO ICES Emitter-Base ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)