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FK10VS-12

Mitsubishi Electric Semiconductor
Part Number FK10VS-12
Manufacturer Mitsubishi Electric Semiconductor
Description HIGH-SPEED SWITCHING USE
Published Mar 30, 2005
Detailed Description MITSUBISHI Nch POWER MOSFET FK10VS-12 HIGH-SPEED SWITCHING USE FK10VS-12 OUTLINE DRAWING r 1.5MAX. Dimensions in mm ...
Datasheet PDF File FK10VS-12 PDF File

FK10VS-12
FK10VS-12

Overview
MITSUBISHI Nch POWER MOSFET FK10VS-12 HIGH-SPEED SWITCHING USE FK10VS-12 OUTLINE DRAWING r 1.
5MAX.
Dimensions in mm 4.
5 1.
3 10.
5MAX.
1.
5MAX.
8.
6 ± 0.
3 9.
8 ± 0.
5 3.
0 +0.
3 –0.
5 0 –0 +0.
3 1 5 0.
8 0.
5 q w e wr 2.
6 ± 0.
4 ¡VDSS 600V ¡rDS (ON) (MAX) .
.
1.
18Ω ¡ID .
.
.
.
10A ¡Integrated Fast Recovery Diode (MAX.
) .
.
.
150ns q q GATE w DRAIN e SOURCE r DRAIN e TO-220S APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc.
MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 600 ±30 10 30 10 30 150 –55 ~ +150 –55 ~ +150 1.
2 4.
5 Unit V V A A A A W °C °C g Feb.
1999 (1.
5) MITSUBISHI Nch POWER MOSFET FK10VS-12 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min.
600 ±30 — — 2 — — 4.
5 — — — — — — — — — — Typ.
— — — — 3 0.
90 4.
50 7.
0 1500 170 25 25 35 130 45 1.
5 — — Max.
— — ±10 1 4 1.
18 5.
90 — — — — — — — — 2.
0 0.
83 150 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W ns Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage ...


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