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FM2G300US60

Part Number	FM2G300US60
Manufacturer	Fairchild Semiconductor
Description	Molding Type Module
Published	Mar 30, 2005
Detailed Description	FM2G300US60 IGBT FM2G300US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGB...
Datasheet	FM2G300US60 PDF File

Overview

FM2G300US60 IGBT FM2G300US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness.
They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
Features • • • • • • UL Certified No.
E209204 Short circuit rated 10us @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.
2 V @ IC = 300A High input impedance Fast and soft anti-parallel FWD Package Code : 7PM-BB E1/C2 Application • • • • • AC & DC motor controls General purpose inverters Robotics Servo controls UPS C1 E2 G1 E1 G2 E2 Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg Viso Mounting Torque TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminals Screw: M5 Mounting Screw: M6 @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ AC 1minute FM2G300US60 600 ± 20 300 600 300 600 10 1250 -40 to +150 -40 to +125 2500 2.
0 2.
5 Units V V A A A A us W °C °C V N.
m N.
m Notes : (1) Repetitive rating : Pulse width limited by max.
junction temperature ©2002 Fairchild Semiconductor Corporation FM2G300US60 Rev.
A1 FM2G300US60 Electrical Characteristics of the IGBT T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min.
Typ.
Max.
Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V...

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FM2G300US60 Molding Type Module - Fairchild Semiconductor

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