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FB180SA10

International Rectifier
Part Number FB180SA10
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 30, 2005
Detailed Description PD- 91651C FB180SA10 HEXFET® Power MOSFET l l l l l l l l Fully Isolated Package Easy to Use and Parallel Very Low On-...
Datasheet PDF File FB180SA10 PDF File

FB180SA10
FB180SA10

Overview
PD- 91651C FB180SA10 HEXFET® Power MOSFET l l l l l l l l Fully Isolated Package Easy to Use and Parallel Very Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance Low Internal Inductance D VDSS = 100V RDS(on) = 0.
0065W G ID = 180A S Description Fifth Generation, high current density HEXFETS are paralled into a compact, high power module providing the best combination of switching, ruggedized design, very low ON resistance and cost effectiveness.
The isolated SOT-227 package is preferred for all commercial - industrial applications at power dissipation levels to approximately 500 watts.
The low thermal resistance and easy connection to the SOT227 package contribute to its universal acceptance throughout the industry.
S O T -22 7 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG VISO Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 1...


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