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FBR1006

EIC discrete Semiconductors
Part Number FBR1006
Manufacturer EIC discrete Semiconductors
Description FAST RECOVERY BRIDGE RECTIFIERS
Published Mar 30, 2005
Detailed Description FBR1000 - FBR1010 PRV : 50 - 1000 Volts Io : 10 Amperes FEATURES : * * * * * * * High case dielectric strength High surg...
Datasheet PDF File FBR1006 PDF File

FBR1006
FBR1006


Overview
FBR1000 - FBR1010 PRV : 50 - 1000 Volts Io : 10 Amperes FEATURES : * * * * * * * High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Ideal for printed circuit board FAST RECOVERY BRIDGE RECTIFIERS BR10 0.
520 (13.
20) 0.
480 (12.
20) 0.
158 (4.
00) 0.
142 (3.
60) AC 0.
77 (19.
56) 0.
73 (18.
54) 0.
290 (7.
36) 0.
210 (5.
33) AC MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL - STD 202 , Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 6.
1 grams 0.
052 (1.
32) 0.
048 (1.
22) 0.
75 (19.
1) Min.
0.
30 (7.
62) 0.
25 (6.
35) Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55 °C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.
3 ms.
Maximum Forward Voltage drop per Diode at IF = 5.
0 Amps.
Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC IF(AV) FBR FBR FBR FBR FBR FBR FBR UNIT 1000 1001 1002 1004 1006 1008 1010 50 35 50 100 70 100 200 140 200 400 280 400 10 600 420 600 800 560 800 1000 Volts 700 Volts 1000 Volts Amps.
IFSM It VF IR IR(H) Trr RθJC TJ TSTG 150 2 250 160 1.
3 10 200 250 2.
5 - 50 to + 150 - 50 to + 150 500 Amps.
A2S Volts µA µA ns °C/W °C °C Maximum Reverse Recovery Time (Note 1) Typical Thermal Resistance per diode (Note 2) Operating Junction Temperature Range Storage Temperature Range Notes : 1 ) Measured with IF = 0.
5 Amp.
, IR = 1 Amp.
...



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