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FC108

Sanyo Semicon Device
Part Number FC108
Manufacturer Sanyo Semicon Device
Description NPN Transistor
Published Mar 30, 2005
Detailed Description Ordering number:EN3076 FC108 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features · On-ch...
Datasheet PDF File FC108 PDF File

FC108
FC108

Overview
Ordering number:EN3076 FC108 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features · On-chip bias resistors (R1=47kΩ, R2=47kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
· The FC108 is formed with two chips, being equivalent to the 2SC3395, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Package Dimensions unit:mm 2066 [FC108] Electrical Connection C1:Collector1 C2:Collector2 B2:Base2 EC:Emitter Common B1:Base1 SANYO:CP5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC I CP PC PT Tj Tstg 1 unit Conditions Ratings 50 50 10 100 200 200 300 150 –55 to+150 Unit V V V mA mA mW mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage Input OFF-State Voltage Input ON-State Voltage Input Resistance Resistance Ratio Symbol ICBO ICEO IEBO hFE fT Co b VCB=40V, IE=0 VCE=40V, IB=0 VEB=5V, IC=0 VCE=5V, IC=5mA VCE=10V, IC=5mA VCB=10V, f=1MHz 50 50 0.
8 1.
0 32 0.
9 1.
1 2.
5 47 1.
0 1.
5 5.
0 62 1.
1 30 50 250 3.
3 0.
1 0.
3 MHz pF V V V V V kΩ 53 Conditions Ratings min typ max 0.
1 0.
5 80 Unit µA µA µA VCE(sat) IC=5mA.
IB=0.
25mA V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=100µA, RBE=∞ VI(off) VI(on) R1 R1/R2 VCE=5V, IC=100µA VCE=0.
2V, IC=5mA Note: The specifications shown above are for each individual transistor.
Marking:107 SANYO Electric Co.
,Ltd.
Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg.
, 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/4139MO, TS No.
3076-1/2 FC108 Sample Applicati...


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