Part Number  FC111 
Manufacturer  Sanyo Semicon Device 
Title  PNP Transistor 
Description  Ordering number:EN3079 FC111 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications Features · Onchip bias resistors (R1=22kΩ... 
Features 
· Onchip bias resistors (R1=22kΩ, R2=22kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC111 is formed with two chips, being equivalent to the 2SA1342, placed in one package. · Excellent in thermal equilibrium an... 
File Size  55.12KB 
Datasheet 

FC11 : Ordering number:EN3154 FC11 NChannel Junction Silicon FET LowFrequency GeneralPurpose Amp, Differential Amp Applications Features · Adoption of FBET process. · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC11 is formed with two chips, being equivalent to the 2SK771, placed in one package. · Excellent in the thermal equilibrium and pair capability and suitable for use in differential amp. · Common source. Package Dimensions unit:mm 2070 [FC11] Electrical Connection G1:Gate1 G2:Gate2 D2:Drain2 SC:Source Common D1:Drain1 SANYO:CP5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drainto.
FC110 : Ordering number:EN3078 FC110 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features · Onchip bias resistors (R1=22kΩ, R2=22kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC110 is formed with two chips, being equivalent to the 2SC3396, placed in one package. · Excellent in thermal equilibrium and pair capability. Package Dimensions unit:mm 2067 [FC110] Electrical Connection E1:Emitter1 B1:Base1 C2:Collerctor2 E2:Emitter2 B2:Base2 C1:Collector1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter CollectortoBase Voltage CollectortoEmitter Voltage Emi.
FC112 : Ordering number:EN3080 FC112 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features · Onchip bias resistors (R1=22kΩ, R2=22kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC112 is formed with two chips, being equivalent to the 2SC3396, placed in one package. · Excellent in thermal equilibrium and pair capability. Package Dimensions unit:mm 2066 [FC112] Electrical Connection C1:Collerctor1 C2:Collerctor2 B2:Base2 EC:Emitter Common B1:Base1 SANYO:CP5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter CollectortoBase Voltage CollectortoEmitter Voltage Emittert.
FC113 : Ordering number:EN3081 FC113 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications Features · Onchip bias resistors (R1=10kΩ, R2=10kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC113 is formed with two chips, being equivalent to the 2SA1344, placed in one package. · Excellent in thermal equilibrium and pair capability. Package Dimensions unit:mm 2067 [FC113] Electrical Connection E1:Emitter1 B1:Base1 C2:Collerctor2 E2:Emitter2 B2:Base2 C1:Collerctor1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter CollectortoBase Voltage CollectortoEmitter Voltage Em.
FC114 : Ordering number:EN3082 FC114 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features · Onchip bias resistors (R1=10kΩ, R2=10kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC114 is formed with two chips, being equivalent to the 2SC3398, placed in one package. · Excellent in thermal equilibrium and pair capability. Package Dimensions unit:mm 2067 [FC114] Electrical Connection E1:Emitter1 B1:Base1 C2:Collerctor2 E2:Emitter2 B2:Base2 C1:Collerctor1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter CollectortoBase Voltage CollectortoEmitter Voltage Em.
FC115 : Ordering number:EN3083 FC115 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications Features · Onchip bias resistors (R1=10kΩ, R2=10kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC115 is formed with two chips, being equivalent to the 2SA1344, placed in one package. · Excellent in thermal equilibrium and pair capability. Package Dimensions unit:mm 2066 [FC115] Electrical Connection C1:Collector1 C2:Collerctor2 B2:Base2 EC:Emitter Common B1:Base1 SANYO:CP5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter CollectortoBase Voltage CollectortoEmitter Voltage Emitterto.
FC116 : Ordering number:EN3084 FC116 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features · Onchip bias resistors (R1=10kΩ, R2=10kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC116 is formed with two chips, being equivalent to the 2SC3398, placed in one package. · Excellent in thermal equilibrium and pair capability. Package Dimensions unit:mm 2066 [FC116] Electrical Connection C1:Collector1 C2:Collerctor2 B2:Base2 EC:Emitter Common B1:Base1 SANYO:CP5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter CollectortoBase Voltage CollectortoEmitter Voltage Emitterto.
FC117 : Ordering number:EN3115 FC117 PNP Epitaxial Planar Silicon Composite Transistor LowFrequency GeneralPurpose Amp Applications Features · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC117 is formed with two chips, being equivalent to the 2SA1753, placed in one package. · Low collector to emitter saturation voltage. · Excellent in thermal equilibrium and pair capability. Package Dimensions unit:mm 2067 [FC117] Electrical Connection E1:Emitter1 B1:Base1 C2:Collerctor2 E2:Emitter2 B2:Base2 C1:Collector1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter CollectortoBase Voltage Colle.
FC118 : Ordering number:EN3116 FC118 NPN Epitaxial Planar Silicon Composite Transistor LowFrequency GeneralPurpose Amp Applications Features · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC118 is formed with two chips, being equivalent to the 2SC4577, placed in one package. · Low collector to emitter saturation voltage. · Excellent in thermal equilibrium and pair capability. Package Dimensions unit:mm 2067 [FC118] Electrical Connection E1:Emitter1 B1:Base1 C2:Collerctor2 E2:Emitter2 B2:Base2 C1:Collector1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter CollectortoBase Voltage Colle.
FC119 : Ordering number:EN3061A FC119 NPN Epitaxial Planar Silicon Transistor HighFrequency GeneralPurpose Amp, Differential Amp Applications Features · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC119 is formed with two chips, being equivalent to the 2SC2814, placed in one package. · Excellent in thermal equilibrium and pair capability. Package Dimensions unit:mm 2068 [FC119] Electrical Connection E1:Emitter1 E2:Emitter2 B2:Base2 C2:Collerctor2 B1:Base1 C1:Collector1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter CollectortoBase Voltage CollectortoEmitter Voltage EmittertoBas.