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FC117 Datasheet PDF

Sanyo Semicon Device
Part Number FC117
Manufacturer Sanyo Semicon Device
Title PNP Transistor
Description Ordering number:EN3115 FC117 PNP Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp Applications Features · Composi...
Features
· Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
· The FC117 is formed with two chips, being equivalent to the 2SA1753, placed in one package.
· Low collector to emitter saturation voltage.
· Excellent in thermal equilibrium...

File Size 75.32KB
Datasheet PDF File FC117 PDF File


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FC107 : Ordering number:EN3075 FC107 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications Features · On-chip bias resistors (R1=47kΩ, R2=47kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC107 is formed with two chips, being equivalent to the 2SA1341, placed in one package. · Excellent in thermal equilibrium and pair capability. Package Dimensions unit:mm 2066 [FC107] Electrical Connection C1:Collector1 C2:Collector2 B2:Base2 EC:Emitter Common B1:Base1 SANYO:CP5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-.

FC108 : Ordering number:EN3076 FC108 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features · On-chip bias resistors (R1=47kΩ, R2=47kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC108 is formed with two chips, being equivalent to the 2SC3395, placed in one package. · Excellent in thermal equilibrium and pair capability. Package Dimensions unit:mm 2066 [FC108] Electrical Connection C1:Collector1 C2:Collector2 B2:Base2 EC:Emitter Common B1:Base1 SANYO:CP5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-.

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FC11 : Ordering number:EN3154 FC11 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amp, Differential Amp Applications Features · Adoption of FBET process. · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC11 is formed with two chips, being equivalent to the 2SK771, placed in one package. · Excellent in the thermal equilibrium and pair capability and suitable for use in differential amp. · Common source. Package Dimensions unit:mm 2070 [FC11] Electrical Connection G1:Gate1 G2:Gate2 D2:Drain2 SC:Source Common D1:Drain1 SANYO:CP5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-.

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FC111 : Ordering number:EN3079 FC111 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications Features · On-chip bias resistors (R1=22kΩ, R2=22kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC111 is formed with two chips, being equivalent to the 2SA1342, placed in one package. · Excellent in thermal equilibrium and pair capability. Package Dimensions unit:mm 2066 [FC111] Electrical Connection C1:Collerctor1 C2:Collerctor2 B2:Base2 EC:Emitter Common B1:Base1 SANYO:CP5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-t.

FC112 : Ordering number:EN3080 FC112 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features · On-chip bias resistors (R1=22kΩ, R2=22kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC112 is formed with two chips, being equivalent to the 2SC3396, placed in one package. · Excellent in thermal equilibrium and pair capability. Package Dimensions unit:mm 2066 [FC112] Electrical Connection C1:Collerctor1 C2:Collerctor2 B2:Base2 EC:Emitter Common B1:Base1 SANYO:CP5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-t.

FC113 : Ordering number:EN3081 FC113 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications Features · On-chip bias resistors (R1=10kΩ, R2=10kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC113 is formed with two chips, being equivalent to the 2SA1344, placed in one package. · Excellent in thermal equilibrium and pair capability. Package Dimensions unit:mm 2067 [FC113] Electrical Connection E1:Emitter1 B1:Base1 C2:Collerctor2 E2:Emitter2 B2:Base2 C1:Collerctor1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Em.

FC114 : Ordering number:EN3082 FC114 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features · On-chip bias resistors (R1=10kΩ, R2=10kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC114 is formed with two chips, being equivalent to the 2SC3398, placed in one package. · Excellent in thermal equilibrium and pair capability. Package Dimensions unit:mm 2067 [FC114] Electrical Connection E1:Emitter1 B1:Base1 C2:Collerctor2 E2:Emitter2 B2:Base2 C1:Collerctor1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Em.

FC115 : Ordering number:EN3083 FC115 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications Features · On-chip bias resistors (R1=10kΩ, R2=10kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC115 is formed with two chips, being equivalent to the 2SA1344, placed in one package. · Excellent in thermal equilibrium and pair capability. Package Dimensions unit:mm 2066 [FC115] Electrical Connection C1:Collector1 C2:Collerctor2 B2:Base2 EC:Emitter Common B1:Base1 SANYO:CP5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to.

FC116 : Ordering number:EN3084 FC116 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features · On-chip bias resistors (R1=10kΩ, R2=10kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC116 is formed with two chips, being equivalent to the 2SC3398, placed in one package. · Excellent in thermal equilibrium and pair capability. Package Dimensions unit:mm 2066 [FC116] Electrical Connection C1:Collector1 C2:Collerctor2 B2:Base2 EC:Emitter Common B1:Base1 SANYO:CP5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to.




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