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FCX617

Zetex Semiconductors
Part Number FCX617
Manufacturer Zetex Semiconductors
Description NPN SILICON POWER (SWITCHING) TRANSISTOR
Published Mar 30, 2005
Detailed Description SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 1 - NOVEMBER 1998 FEATURES FCX617 C * * * * * 2W POWER DISSIPAT...
Datasheet PDF File FCX617 PDF File

FCX617
FCX617

Overview
SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 1 - NOVEMBER 1998 FEATURES FCX617 C * * * * * 2W POWER DISSIPATION 12A Peak Pulse Current Excellent HFE Characteristics up to 12 Amps Extremely Low Saturation Voltage E.
g.
8mv Typ.
Extremely Low Equivalent On-resistance; RCE(sat) 50mΩ at 3A E C B Partmarking Detail - 617 ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current ** Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE 15 15 5 12 3 500 1 † 2 ‡ -55 to +150 UNIT V V V A A mA W W °C † recommended Ptot calculated using FR4 measuring 15x15x0.
6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.
6mm and using comparable measurement methods adopted by other suppliers.
**Measured under pulsed conditions.
Pulse width=300µs.
Duty cycl...


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