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FCX717

Zetex Semiconductors
Part Number FCX717
Manufacturer Zetex Semiconductors
Description PNP SILICON POWER (SWITCHING) TRANSISTOR
Published Mar 30, 2005
Detailed Description SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 1 - MAY 1999 FEATURES FCX717 * * * * * 2W POWER DISSIPATION 10A...
Datasheet PDF File FCX717 PDF File

FCX717
FCX717

Overview
SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 1 - MAY 1999 FEATURES FCX717 * * * * * 2W POWER DISSIPATION 10A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.
g.
12mv Typ.
Extremely Low Equivalent On-resistance; RCE(sat) 77m at 3A Partmarking Detail - 717 ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current ** Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE -12 -12 -5 -10 -3 -500 1 † 2 ‡ -55 to +150 UNIT V V V A A mA W W °C † recommended Ptot calculated using FR4 measuring 15x15x0.
6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.
6mm and using comparable measurement methods adopted by other suppliers.
**Measured under pulsed conditions.
Pulse width=300µs.
Duty cycle  2% S...


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