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FDC658P

Fairchild Semiconductor
Part Number FDC658P
Manufacturer Fairchild Semiconductor
Description Single P-Channel MOSFET
Published Mar 30, 2005
Detailed Description February 1999 FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description This P-Channel Logic Leve...
Datasheet PDF File FDC658P PDF File

FDC658P
FDC658P

Overview
February 1999 FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Features -4 A, -30 V.
RDS(ON) = 0.
050 Ω @ VGS = -10 V RDS(ON) = 0.
075 Ω @ VGS = -4.
5 V.
Low gate charge (8nC typical).
High performance trench technology for extremely low RDS(ON).
SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S D D 1 6 8 .
65 G D 2 5 SuperSOT TM -6 pin 1 D 3 4 Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise note Ratings Units VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1a) -30 ±20 -4 -20 1.
6 0.
8 -55 to 150 V V A W TJ,TSTG RθJA RθJC Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 30 °C/W °C/W © 1999 Fairchild Semiconductor Corporation FDC658P Rev.
C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25 C VDS = -24 V, VGS = 0 V TJ = 55 oC VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V o -30 -22 -1 -10 100 -100 V mV/oC µA µA nA nA ∆BVDSS/∆TJ IDSS IGSSF IGSSR Gate - Body Leakage, Forward Gate - Body Leakage, Reverse ON CHARACTERISTICS (Note 2) ...


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