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FDD2572

Fairchild Semiconductor
Part Number FDD2572
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDD2572 / FDU2572 FDD2572 / FDU2572 N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ Features • rDS(ON) = 45mΩ (Typ.), VGS...
Datasheet PDF File FDD2572 PDF File

FDD2572
FDD2572

Overview
FDD2572 / FDU2572 FDD2572 / FDU2572 N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ Features • rDS(ON) = 45mΩ (Typ.
), VGS = 10V, ID = 9A • Qg(tot) = 26nC (Typ.
), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) July 2014 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures and VRMs • Primary Switch for 24V and 48V Systems • High Voltage Synchronous Rectifier Formerly developmental type 82860 GATE DRAIN (FLANGE) DRAIN (FLANGE) SOURCE DRAIN GATE SOURCE TO-252AA FDD SERIES TO-251AA FDU SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, RθJA = 52oC/W) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-251, TO-252 Thermal Resistance Junction to Ambient TO-251, TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area G Ratings 150 ±20 29 20 4 Figure 4 36 135 0.
9 -55 to 175 1.
11 100 52 D S Units V V A A A mJ W W/oC oC oC/W oC/W oC/W ©2002 Fairchild Semiconductor Corporation FDD2572 / FDU2572 Rev.
2.
3 FDD2572 / FDU2572 Package Marking and Ordering Information Device Marking FDD2572 FDU2572 Device FDD2572 FDU2572 Package TO-252AA TO-251AA Reel Size 330mm Tube Tape Width 16mm N/A Quantity 2500 units 75 units Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V 150 VDS = 120V - VGS = 0V TC = 150o - VGS = ±20V - - - V - 1 250 µA - ±100 nA On Characteristic...


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