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FDD6030BL

Fairchild Semiconductor
Part Number FDD6030BL
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDD6030BL/FDU6030BL July 2001 FDD6030BL/FDU6030BL 30V N-Channel PowerTrench® MOSFET General Description This N-Channe...
Datasheet PDF File FDD6030BL PDF File

FDD6030BL
FDD6030BL

Overview
FDD6030BL/FDU6030BL July 2001 FDD6030BL/FDU6030BL 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.
Applications • DC/DC converter • Motor drives Features • 42 A, 30 V RDS(ON) = 16 mΩ @ VGS = 10 V RDS(ON) = 22 mΩ @ VGS = 4.
5 V • Low gate charge (22 nC typical) • Fast switching • High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) GDS I-PAK (TO-251AA) D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C (Note 3) @TA=25°C (Note 1a) Pulsed (Note 1a) Power Dissipation @TC=25°C (Note 3) @TA=25°C (Note 1a) @TA=25°C (Note 1b) Operating and Storage Junction Temperature Range Ratings 30 ±20 42 10 100 50 3.
8 1.
6 –55 to +175 Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient RθJA Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) Package Marking and Ordering Information Device Marking Device Package FDD6030BL FDD6030BL D-PAK (TO-252) FDU6030BL FDU6030BL I-PAK (TO-251) Reel Size 13’’ Tube 3.
0 45 96 Tape width 12mm N/A Units V V A W °C °C/W °C/W °C/W Quantity 2500 units 75 ©2001 Fairchild Semiconductor Corporation FDD6030BL/FDU6030BL Rev C(W) FDD6030BL/FDU6030BL Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V IAR Drain-Source Avalanche Current Off Characteristics BV DSS ∆BV DSS ∆TJ IDSS Drain–Source Breakdown Voltage Break...


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