DatasheetsPDF.com

FDD6612A

Fairchild Semiconductor
Part Number FDD6612A
Manufacturer Fairchild Semiconductor
Description 30V N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDD6612A/FDU6612A March 2015 FDD6612A/FDU6612A 30V N-Channel PowerTrench® MOSFET General Description This N-Channel M...
Datasheet PDF File FDD6612A PDF File

FDD6612A
FDD6612A

Overview
FDD6612A/FDU6612A March 2015 FDD6612A/FDU6612A 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.
Applications • DC/DC converter • Motor Drives Features • 30 A, 30 V RDS(ON) = 20 mΩ @ VGS = 10 V RDS(ON) = 28 mΩ @ VGS = 4.
5 V • Low gate charge • Fast Switching • High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) GDS I-PAK (TO-251AA) D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C @TA=25°C Pulsed (Note 3) (Note 1a) (Note 1a) PD TJ, TSTG Power Dissipation @TC=25°C (Note 1) @TA=25°C (Note 1a) @TA=25°C (Note 1b) Operating and Storage Junction Temperature Range Ratings 30 ±20 30 9.
5 60 36 2.
8 1.
3 –55 to +175 Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) Package Marking and Ordering Information Device Marking Device Package FDD6612A FDD6612A D-PAK (TO-252) FDU6612A FDU6612A I-PAK (TO-251) Reel Size 13’’ Tube 3.
9 45 96 Tape width 16mm N/A Units V V A W °C °C/W °C/W °C/W Quantity 2500 units 75 ©2004 Fairchild Semiconductor Corporation FDD6612A/FDU6612A Rev.
4.
1 FDD6612A/FDU6612A Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS Drain-Source Avalanche Energy Single Pulse, VDD = 27 V, ID=10 A IAR Drain-Source Avalanche Current 51 mJ 10 A Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)