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FDG330P

Fairchild Semiconductor
Part Number FDG330P
Manufacturer Fairchild Semiconductor
Description P-Channel 1.8V Specified PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description FDG330P December 2001 FDG330P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V spe...
Datasheet PDF File FDG330P PDF File

FDG330P
FDG330P

Overview
FDG330P December 2001 FDG330P P-Channel 1.
8V Specified PowerTrench MOSFET General Description This P-Channel 1.
8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management applications.
Features • –2 A, –12 V.
RDS(ON) = 110 mΩ @ VGS = –4.
5 V RDS(ON) = 150 mΩ @ VGS = –2.
5 V RDS(ON) = 215 mΩ @ VGS = –1.
8 V Applications • Battery management • Load switch • Low gate charge • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC70-6 surface mount package D D S 1 6 2 5 Pin 1 SC70-6 D D G 3 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-...


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