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FDN339AN

Fairchild Semiconductor
Part Number FDN339AN
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDN339AN November 1999 FDN339AN N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel 2.5V s...
Datasheet PDF File FDN339AN PDF File

FDN339AN
FDN339AN

Overview
FDN339AN November 1999 FDN339AN N-Channel 2.
5V Specified PowerTrench MOSFET General Description This N-Channel 2.
5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features • 3 A, 20 V.
RDS(ON) = 0.
035 Ω @ VGS = 4.
5 V RDS(ON) = 0.
050 Ω @ VGS = 2.
5 V.
• • • Low gate charge (7nC typical).
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.
Applications • DC/DC converter • Load switch D D S SuperSOT -3 TM G TA = 25°C unless otherwise noted G S Absolu...


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