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FDP6021P

Fairchild Semiconductor
Part Number FDP6021P
Manufacturer Fairchild Semiconductor
Description 20V P-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDP6021P/FDB6021P April 2001 PRELIMINARY FDP6021P/FDB6021P 20V P-Channel 1.8V Specified PowerTrench MOSFET General De...
Datasheet PDF File FDP6021P PDF File

FDP6021P
FDP6021P

Overview
FDP6021P/FDB6021P April 2001 PRELIMINARY FDP6021P/FDB6021P 20V P-Channel 1.
8V Specified PowerTrench MOSFET General Description This P-Channel power MOSFET uses Fairchild’s low voltage PowerTrench process.
It has been optimized for power management applications.
Features • –28 A, –20 V.
RDS(ON) = 30 mΩ @ VGS = 4.
5 V RDS(ON) = 40 mΩ @ VGS = 2.
5 V RDS(ON) = 65 mΩ @ VGS = 1.
8 V • Critical DC electrical parameters specified at elevated temperature • High performance trench technology for extremely low RDS(ON) • 175°C maximum junction temperature rating Applications • Battery management • Load switch • Voltage regulator .
D G S G G D S TO-220 FDP Series S TO-263AB FDB Series D Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings –20 ±8 (Note 1) (Note 1) Units V V A W W °C °C –28 –80 37 0.
25 –65 to +175 Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 4 62.
5 °C/W °C/W Package Marking and Ordering Information Device Marking FDP6021P FDB6021P Device FDP6021P FDB6021P Reel Size Tube 13” Tape width n/a 24mm Quantity 45 800 units 2001 Fairchild Semiconductor Corporation FDP6021P/FDB6021P Rev B(W) FDP6021P/FDB6021P Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = –250 µA ID = –250 µA,Referenced to 25°C VDS = –16 V, VGS = 8 V, VGS = –8 V VGS = 0 V VDS = 0 V VDS = 0 V Min –20 Typ Max Units V Off Characteristics –16 –1 100 –100 mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Thresh...


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