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FDP6676

Fairchild Semiconductor
Part Number FDP6676
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDP6676/FDB6676 April 2001 FDP6676/FDB6676 30V N-Channel Logic Level PowerTrench MOSFET General Description This N-Ch...
Datasheet PDF File FDP6676 PDF File

FDP6676
FDP6676

Overview
FDP6676/FDB6676 April 2001 FDP6676/FDB6676 30V N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) .
Features • 42 A, 30 V.
RDS(ON) = 6.
0 mΩ @ VGS = 10 V RDS(ON) = 7.
5 mΩ @ VGS = 4.
5 V • Critical DC electrical parameters specified at elevated temperature • High performance trench technology for extremely low RDS(ON) • 175°C maximum junction temperature rating Applications • Synchronous rectifier • DC/DC converter .
D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ± 16 (Note 1) (Note 1) Units V V A W W °C °C 84 240 93 0.
48 -65 to +175 Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.
6 62.
5 °C/W °C/W Package Marking and Ordering Information Device Marking FDP6676 FDB6676 Device FDP6676 FDB6676 Reel Size Tube 13” Tape width n/a 24mm Quantity 45 800 units 2000 Fairchild Semiconductor Corporation FDP6676/FDB6676 Rev C(W) FDP6676/FDB6676 Electrical Characteristics Symbol W DSS IAR TA = 25°C unless otherwise noted Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Test Conditions VDD = 15 V, ID = 20 A Min Typ Max Units 370 20 mJ A Drain-Source Avalanche Ratings (Note 1) Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body...


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