DatasheetsPDF.com

FDP7042L

Fairchild Semiconductor
Part Number FDP7042L
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDP7042L / FDB7042L June 2000 PRELIMINARY FDP7042L / FDB7042L N-Channel Logic Level PowerTrench MOSFET General Descri...
Datasheet PDF File FDP7042L PDF File

FDP7042L
FDP7042L

Overview
FDP7042L / FDB7042L June 2000 PRELIMINARY FDP7042L / FDB7042L N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) .
Features • 50 A, 30 V.
RDS(ON) = 9 mΩ @ VGS = 4.
5 V RDS(ON) = 7.
5 mΩ @ VGS = 10 V • Critical DC electrical parameters specified at elevated temperature • High performance trench technology for extremely low RDS(ON) • 175°C maximum junction temperature rating Applications • Synchronous rectifier • DC/DC converter D D G G D TO-220 S FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ± 12 (Note 1) (Note 1) Units V V A W W°C °C 50 150 83 0.
48 -65 to +175 Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.
8 62.
5 °C/W °C/W Package Marking and Ordering Information Device Marking FDB7042L FDP7042L Device FDB7042L FDP7042L Reel Size 13’’ Tube Tape width 24mm n/a Quantity 800 units 45 2000 Fairchild Semiconductor Corporation FDP7042L Rev B(W) FDP7042L / FDB7042L Electrical Characteristics Symbol BVDSS ∆BVDSS ===∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ===∆TJ RDS(on) TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 12 V, VGS = –12 V VGS = 0 V VDS = 0 V VDS = 0 V Min 30 Typ ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)