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FDS3912

Fairchild Semiconductor
Part Number FDS3912
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDS3912 October 2001 FDS3912 100V Dual N-Channel PowerTrench® MOSFET General Description These N-Channel MOSFETs have ...
Datasheet PDF File FDS3912 PDF File

FDS3912
FDS3912

Overview
FDS3912 October 2001 FDS3912 100V Dual N-Channel PowerTrench® MOSFET General Description These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features • 3 A, 100 V.
RDS(ON) = 125 mΩ @ VGS = 10 V RDS(ON) = 135 mΩ @ VGS = 6 V • Fast switching speed • Low gate charge (14 nC typ) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability 5 6 7 8 Q2 Q1 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Ratings 100 ±20 (No...


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